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électronique et électrotechnique - acta.es
All-solution-basedheterogeneous material formationfor p–n junction diodes...challenge.This study proposes an approach for solution-based devices in whicha p–n junction diode is fabricated using a solution-based InZnOthin film for the n-type semiconductor and a carbon nanotube networkfilm for the p-type semiconductor....
électronique et électrotechnique - core.ac.uk - PDF: figshare.com

Publications scientifiques

P-gan hetero-junction diode fabricated by ultra-high vacuum sputterWe investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter....
général - core.ac.uk - PDF: www.ingentaconnect.com
Analysis of high-voltage trench bipolar junction diode (tbjd)In this paper, a new high-voltage power diode structure, called the Trench Bipolar Junction Diode (TBJD) is proposed and analyzed with the aid of 2-D numerical simulations and experiments....
général - core.ac.uk - PDF: www.scopus.com
Coupling two-dimensional mote2 and ingaznothin-film materials for hybrid pn junction and cmos invertersWe report the fabricationof hybrid PN junction diode and complementary(CMOS) inverters, where 2D p-type MoTe2 and n-type thinfilm InGaZnO (IGZO) are coupled for each device process....
général - core.ac.uk - PDF: figshare.com
Analysis of the electrical properties of cr/n-basi2 schottky junction and n-basi2/p-si heterojunction diodes for solar cell applications... As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2....
général - core.ac.uk - PDF: core.ac.uk

Synonymes et termes associés français

Traductions en contexte français - anglais

Cette opération permet de réduire la tension aux bornes de la diode à jonctions formée entre la région source/drain du transistor d'accès et du substrat.

This reduces the voltage across diode junctions formed between the source/drain of respective access transistor and the substrate.

industrie mécanique - wipo.int


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