The p-dopant concentration of the two-doped region (210, 224) is higher than the p-dopant concentration of the isolated p-doped region.

The high performance index is stable because the dopant concentration is so controlled that the high performance index is achieved.

In one example, a dopant concentration within a top cladding material is between 3-6 % (wt.).

A dopant concentration in the surface of the second diode areas is at least three times higher than in the first diode areas.

Increasing the dopant concentration helps reduce the resistance of silicon and therefore the forward voltage (VF) of the SBD, but at the expense of withstand voltage (i.e., triangle area).