Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
Embodiments of a parallel system for epitaxial deposition are disclosed herein.
An epitaxial deposition method for processing a single wafer (45) and a reaction chamber (81) for conducting the method.
This improved process enables efficient epitaxial deposition without the original roughness, geometries or soiling of the substrate being important.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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