The present invention relates to a method of curing defects in a spin-on-glass more particularly bubble defects on the spin-on-glass.

The low dielectric constant material may be deposited by a spin-coating process and patterned using reactive ion etching or other suitable techniques.

The rough substrate is coated with a film or particles of spin-on-glass (SOG) dissolved in a solvent using spin coating, spray coating or dip coating.

A method for planarization of a semiconductor process material that contains exposed surfaces of an oxide of silicon and a spin-on-glass (SOG).

The spin-on-glass can for example be hydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ) dissolved in either methyl isobutyl ketone (MIBK) or volatile methyl siloxanes (VMS).

A spin-on film (1) containing low volatility solvents does not grow back into the region (4) from which the film was removed, the edge bead removal process time can be reduced to less than about 10 seconds, and the volume of waste solvent is reduced.

The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.

The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices, in particular for flat panel displays.

The advantage of the present invention is eliminate o reduce bubble effects on all the layers of SOG i.e. the first layer of SOG and the second and subsequent layers of SOG.