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électronique et électrotechnique - iate.europa.eu
Novel low von poly-si/4h-sic heterojunction diode using energy barrier height control...controlling the energy barrier height (ΦB) of polycrystalline silicon (poly-Si)/4H-SiC heterojunction diodes (HJDs) and conducted a numerical simulation of a novel low VON and low reverse recovery current diode using ΦB control....
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Switching parameters characterization of aged igbts by thermo-electrical overstress... Furthermore, the corresponding monitored changes in the turn-off delay time, fall time, energy loss during fall time, turn-off rate of change of collector voltage, turnon delay time, rise time, energy loss during rise time, turn-on rate of change of collector current, reverse recovery time, peak reverse recovery current and energy loss during reverse recovery are presented and discussed
Voltage clamped dc-dc convertor with reduced reverse recovery current and stability analysis... In addition, the voltageclamped technology issued to reduce the switch-voltage stress so that it can select the Scotty diode in the output terminal for all aviating the reverse recovery current and decreasing the witching and conduction losses....
Closed loop control of high efficiency voltage clamped dc-dc converter with reduced reverse recovery current and switch voltagesAbstract: This paper investigates a Closed loop Control of high-efficiency clamped voltage dc–dc converter with reduced reverse-recovery current and switch-voltage stress....

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électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
électronique et électrotechnique - iate.europa.eu
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