The ITO layer is then etched to form a plurality of ITO lines.
This intermediate layer prevents reduction of the ITO layer during manufacture.
An intermediate layer (64B) of silicon oxide is provided between the ITO layer and the SiN layer.
At least the side of an organic layer (20) of the anode is composed of a transparent oxide semiconductor layer (ITO layer (12)).
An electro-optical device such as a fingerprint sensor or an X-ray image sensor has an ITO (indium tin oxide) layer (67) and a SiN layer (64A) near the ITO layer.
In addition, an ITO DBR layer is employed right next to a p-contact layer to enhance the light output by higher reflectivity.
A non-overlapped integral capacitive touch screen with an ITO (indium tin oxide) layer and the manufacturing method thereof.
The discharge vessel (1) is made of glass, and an outer surface of the discharge vessel (1) supports a layer (5) made of indium tin oxide (ITO layer).
An ITO layer is formed on a primary film, and a base film is fused to the primary film at a bottom thereof to form a multi-layer transparent conductive layer.
There are visualisations of address and building information available as an ITO Map layer and as a view within Geofabrik's OSM Inspector.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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