A multi-layer structure including an interlayer to relieve stress in the structure, a device including the structure, and a method of forming the device and structure are disclosed.
Having regard to such determination, the peptide-mimetics are constrained in the three-dimensional structure to provide an increased immunogenicity to the epitope sequence.
You’ll study state-of-the-art tools for analysing the water flow around ship hulls, predicting the stresses and strains in the hull structure, and the behaviour of ships in waves.
You’ll study state-of-the-art tools for analysing the water flow around ship hulls, the stresses and strains in the hull structure, and the behaviour of ships in waves.
However, the PBC also admitted that constraints exist in the structure and certain fields in the monetary policy transmission.
The central bank admitted that constraints exist in the structure and within certain fields in the monetary policy transmission.
The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression.
Therefore, the propagation of constraints in such a structure do not necessarily need to be propagated from left to right, but instead are generated in a multi-directional manner.
The dislocation density is the accumulation of stress/imperfections in the metal crystal lattice of the metal.
A multi-layer structure including an interlayer to relieve stress in the structure, a device including the structure, and a method of forming the device and structure are disclosed.
The fuel cell (10) is additionally provided with a stress suppression structure which suppresses stress concentration in a deformation part (35) of the electrolyte membrane (30).
The force-resisting structure includes a vertical support rib structure in the interior defining an X-shaped or cross-shaped configuration.
Poems have specific stresses written into their structure.
A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure.
If such loading generates significant cyclic stresses in the structure it shall be included in the fatigue assessment.
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