An integrated circuit can be attached to the substrate using a flip-chip technique.

A flip chip method of joining a chip and a substrate is described.

Also, the light emitting area can be widened 30% more than in case of employing the flip-chip technique.

The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).

The integrated circuit pairs are formed by connecting an active surface of a first integrated circuit to an active surface of a second integrated circuit using flip chip bonding.

A fillet bond (6) is applied to the circuit board (2) and the flip chip T/R module (1) around at least a portion of the periphery of the flip chip T/R module (1).

Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.

The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount.

The bonded substrate (302) is operatively attached to a circuit board (300) via solder balls (305) in a flip chip attachment arrangement.

The red LEDs (8) are separately manufactured from the blue LEDs (6) , and flip-chip mounted on the bonding pads (46 and 48) formed on the SiC substrate.

An electronics substrate, especially a semiconductor chip, is connected to a microfluidic substrate in a flip-chip configuration.

The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance.

In one embodiment, die (236) is flip-chip mounted on glass substrate (234) .

It is possible to improve the interlayer adhesion in a semiconductor light-emitting element which can be mounted by means of face up or flip chip attachment.

A semiconductor element (14) is connected by the flip chip method on the one surface of the base (5).