The data fields within each data cell provide for a schema which is integrated into the data structure.

The data cell includes a resistance based memory element.

The CBR data is converted into one or more words of an ATM data cell.

The connection request is formatted into a data cell.

Each data cell has a plurality of data fields which are the same or similar for each of the data cells.

The state of the data cell and the state of the reference cell are sensed via a common sensing path.

The control address for accessing a data cell where the data used by the terminal section stored is fetched from a control cell of the control data service section through the communication means.

A sense amplifier (10) for comparing the resistance of a reference cell (45) to a resistance of a data cell.

The data cell is sent to a service control point.

The apparatus generates a CRC value for a first data cell.

Each major data bin can then be sub-divided into minor data bins.

The magnetic tunnel junction data cell has a first resistance state.

The graphical representation may be displayed in place of the data cell.

The magnetic tunnel junction data cell has a first resistance state.

Clock information for the CBR sources and data type information are also converted to words of an ATM data cell.