A method and a test arrangement for testing an SRAM having a first cell and a second cell coupled between a pair of bitlines is disclosed.
One method embodiment includes assigning, to a first cell coupled to a row select line, a first number of program states to which the first cell can be programmed.
The “E” (for once, the EE was avoided) recalls that it is provided with a cell coupled with the shutter.
Requêtes fréquentes français :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
Requêtes fréquentes anglais :1-200, -1k, -2k, -3k, -4k, -5k, -7k, -10k, -20k, -40k, -100k, -200k, -500k, -1000k,
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