The amorphous alloy comprises amorphous aluminum nitride (AlN) and amorphous gallium nitride (GaN).
As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used.
The amorphous thin film (2) is formed of an i-type amorphous thin film/p-type amorphous thin film or a p-type amorphous thin film.
The transparent conductive film (3) is arranged on the amorphous thin film (2) in contact with the amorphous thin film (2).
The present invention is directed to a method of joining an amorphous material to a non-amorphous material including forming a cast mechanical joint between the bulk solidifying amorphous material and the non-amorphous material.
In the powdered form, amorphous selenium is red, while the vitreous form is black.
An amorphous alloy and a method for preparing the amorphous alloy are provided.
The metallic component may include a combination of the metallic alloy existing in the amorphous state and constituents of the amorphous metallic alloy in the amorphous state.
An amorphous oxide and a thin film transistor using the amorphous oxide.
The second layer (8) comprises a material selected from a hydrogenated amorphous silicon carbonitride, a hydrogenated amorphous silicon nitride, and fluorinated amorphous carbon.
The first insulating layer (104) comprises an amorphous metal oxide or amorphous metal nitride.
The amorphous carbon covered tool comprises a base material and an amorphous carbon film.
The memory elements may include an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon.
The amorphous silicon layer has an amorphous doping so that a tunnel junction is formed between the doped crystalline semiconductor layer and the amorphous layer.
The process disclosed herein gives amorphous form directly without interconversion of any crystalline form into amorphous form.
The hybrid transformer core comprises a first yoke of amorphous steel and a second yoke of amorphous steel.
An implantable medical device that can include an amorphous glass primer layer, an amorphous glass drug-containing layer and a nanoporous amorphous glass top-coat layer is disclosed.
The semiconductor may be one selected from the group consisting of amorphous In-Ga-Zn-O (IGZO), amorphous In-Zn-O (IZO) and amorphous Zn-Sn-O (ZTO).
Amorphous carbon: Amorphous carbon is the name used for carbon that does not have any crystalline structure.
Methods for the formation of amorphous rosiglitazone and formulations comprising the amorphous rosiglitazone are described.
The amorphous oxide comprises microcrystals.
The light emission layer may be amorphous.
Said silicate providing compound in the selected form amorphous silica and amorphous metal silicate.
The processes stabilize the amorphous losartan.
The present invention subjects amorphous silicon layers on a substrate to an etching treatment to form an amorphous silicon pattern comprising multiple amorphous silicon layers.
Synthetic amorphous silicon dioxide (nano
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